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Charge breeding system |
Charge breeding system | REXTRAP | REXEBIS | Mass
separator
In contrast to a plasma
ion source, an Electron Beam Ion Source (EBIS) uses mono-energetic electrons
from an electron gun focused by a strong magnetic field to produce highly
charged ions [1,2]. In an EBIS the ions are confined radially by the potential
depression of the negative space charge of the electrons, while the
longitudinal confinement is arranged by potential barriers established by
cylindrical electrodes surrounding the electron beam. Trapped low-charged ions
will undergo stepwise ionisation via electron impact until they are extracted
when the outer barrier is lowered.
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Figure 1. Level 1: The EBIS structure (not to
scale) showing the crucial elements. Level 2: The electrical potential along the
axis for closed trap (green) and ramped extraction (purple). Level
3: Potential created by the electron and ions. |
The REXEBIS has
attained a current density of ~150 A/cm2 and beam currents of <0.4
A. A 1.5 m solenoid provides a trap length of 0.8 m with a magnetic field
strength of 2 T. The electron beam energy is adjustable between 3 and 6 kV. For
these parameters Mg and Cs are charge bred to 7+ and 32+ in 8 ms and 150 ms,
respectively. To obtain a high breeding efficiency, the phase space overlap of
injected ions and the electron beam has to be large. Hence, a rather low
extraction emittance of <10 π mm mrad (95% at 60kV) from the Penning
trap is required for a successful injection into the EBIS. Since only one
specific charge state from the total charge state distribution coming out of
the EBIS is selected in the successive mass separator, the maximum breeding
efficiency is about 30%. The space charge from the electron beam determines an
upper limit for the maximum number of positive ions that can be stored in each
pulse, for the above parameters this gives 5.1010 charges. Assuming 50%
neutralization, 3.109 number of Na+ can be charge bred to Na8+ per pulse. This is almost
one order of magnitude larger than the ion number which can be accumulated in
the Penning trap.
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Figure 2. By varying the breeding time the
charge state distribution is changed and different q/A-values can be
optimised. |
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Figure 3. Time structure of extracted EBIS pulse
measured at the Miniball. Outer barrier lowered and no ramping voltage
applied on the trapping tubes. 90% of the beam is extracted within 80 us. |
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While the voltage of
the trap platform is fixed to 60 kV to decelerate the ions from ISOLDE, the platform
of the EBIS is pulsed between injection and extraction from 60 to about
20 kV. Pulsing of the EBIS high voltage platform allows for a fixed ion
extraction velocity independent of the q/A-value. The low energy (5 keV/u)
leads to an efficient adiabatic bunching and small longitudinal output
emittances of the RFQ. In contrast to the Penning trap with 10-3 mbar buffer gas pressure,
the EBIS requires a vacuum of better than 10-10 mbar. Therefore,
several differential pumping stages are inserted along the transfer line
between trap and EBIS. In spite of the excellent vacuum inside an EBIS, the
residual gas peaks are often comparable to or larger than the radioactive ions
peaks, as illustrated in a figure in the Mass Separator section.
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Figure 4. The REXEBIS superconducting magnet
standing on the HV platform. The vacuum cross containing the electron gun is
closest to the camera and the injection/extraction is performed from the
opposite side. |
The EBIS was built
by the Manne Siegbahn Laboratory in Stockholm in collaboration with Chalmers
University of Technology in Gothenburg.
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Solenoidal magnetic field = 2 T |